TIM5964-25UL (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 44.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE
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