Toshiba
TIM5964-30UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE
(4 views)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM5964-30UL Distributor
