MICROWAVE POWER GaAs FET TIM5964-45SL FEATURES ŋB.
Toshiba Semiconductor
TIM5964-45SL - MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET TIM5964-45SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 9.0dB.
