
TIM5964-4SL-422 (Toshiba)
MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN
G1dB= 8.0dB(Min.) at 5.85GHz to 6.75GHz ・HERMET
(11 views)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・H.
MICROWAVE POWER GaAs FET
TIM5964-4SL-422 Distributor