FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM5964-4SL-422 - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(Min.) at 5.85GHz to 6.75GHz ･HERMET.
