FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba Semiconductor
TIM5964-4UL - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SE.
