TIM6472-16UL (Toshiba)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEA
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
MICROWAVE POWER GaAs FET
TIM6472-16UL Distributor
