Toshiba
TIM6472-16UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEA
Rating:
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(1 votes)
