Toshiba
TIM8596-15 - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 8.5GHz to 9.6GHz ･HIGH GAIN
G1dB= 7.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEA
(12 views)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM8596-15 Distributor
