isc Silicon PNP Darlington Power Transistor DESCRI.
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCE.TIP125F - PNP Transistor
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Darlington Power Transistors (PNP) TIP125/126/127 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed .TIP125 - PNP Transistor
PNP/NPN Silicon Power Transistor P b Lead(Pb)-Free FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (.TIP125 - PNP PLASTIC POWER TRANSISTORS
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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION TIP125 TO-220 - PNP Plastic Power Transistors à TO - 220 Dimensions in millimeters $EVROXWH 0D[ 5DW.TIP125 - Low voltage complementary power Darlington transistor
TIP120, TIP121, TIP122 TIP125, TIP127 Datasheet Low voltage complementary power Darlington transistors Features • Low collector-emitter saturation vo.HTIP125 - PNP EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. HTIP125 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6730 Issued Date : 1997.08.13 Revised Date : 2004.11.19 Pag.TIP125 - PNP SILICON POWER DARLINGTONS
TIP125, TIP126, TIP127 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed f.TIP125 - PNP Epitaxial Darlington Transistor
TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor November 2014 TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor Features •.TIP125 - DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for gen.TIP125 - Plastic Medium-Power Complementary Silicon Transistors
Plastic Medium-Power Complementary Silicon Transistors TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Designed for general−purpose amplifi.TIP125G - NPN Transistor
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplif.