TK13A55DA Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor TK13A55DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 480mΩ (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS

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TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: m

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