TO-220C Datasheet | Specifications & PDF Download

isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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INCHANGE Semiconductor isc Product Specification isc Three Terminal Negative Voltage Regulator 7912 FEATURES ·Output current in excess of 1.5A ·Ou

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INCHANGE Semiconductor isc Three Terminal Positive Voltage Regulator 7805 FEATURES ·Output current in excess of 1.5A ·Output voltage of 5V ·Interna

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INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification MJE13005D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide

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MUR1220CTR thru MUR1260CTR ® MUR1220CTR thru MUR1260CTR Pb Pb Free Plating Product 12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifier

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INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator 7905 FEATURES ·Output current in excess of 1A ·Output voltage of -5V ·Internal

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Stati

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Ex

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1.5SMC6.8CA THRU 1.5SMC220CA SURFACE MOUNT SILICON BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 1500 WATT, 6.8 THRU 220 VOLT

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Technical Data ELX1062 Effective September 2024 Supersedes June 2021 SMAJ Automotive grade 400 W Transient voltage suppressor Applications • Automo

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Metal-Oxide Varistors (MOVs) Surface Mount Varistors > CH Series CH Varistor Series RoHS Agency Approvals Recognized under the components program o

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Isc N-Channel MOSFET Transistor ·FEATURES ·Very low on-resistance ·Very low gate charge ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

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isc Silicon NPN Power Transistors TIP41C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) =

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isc N-Channel MOSFET Transistor IRL520N，IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.18Ω ·Enhancement mode ·Fast Switching Spee

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1V5KE6V8(C)A - 1V5KE440(C)A — 1500 W Transient Voltage Suppressors May 2015 1V5KE6V8(C)A - 1V5KE440(C)A 1500 W Transient Voltage Suppressors Featur

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  400W Peak Pulse Power Dissipation  5.5V – 513V Standoff Voltage  Uni- and Bi-Di

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® WON-TOP ELECTRONICS 1.5SMCJ SERIES 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Pb Features  Glass Passivated Die Construction  1500W Peak P

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® WON-TOP ELECTRONICS 5.0SMCJ SERIES 5000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Pb Features  Glass Passivated Die Construction  5000W Peak P

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TOSHIBA Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor st

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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