TO-263 Datasheet | Specifications & PDF Download

CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

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CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

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LL5711 / LL6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected

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Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 Unit:

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14118 Stowe Drive, Suite B Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controll

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TA8263BH TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8263BH Max Power 43 W BTL × 4 ch Audio Power IC The TA8263BH is 4 ch BTL audi

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CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

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CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

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HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

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isc N-Channel MOSFET Transistor 75N75 FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resis

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MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where

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Date:- 9th September, 2014 Data Sheet Issue:- 3 Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180 Development Type No.: NX159JK160-180 A

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HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

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SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 7 1 FLLD263 2 DIODE PIN CONNECTION 1 3 2 3 SOT23 PART MARKING DE

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5-V Low-Drop Voltage Regulator TLE 4263 Features q q q q q q q q q q Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current con

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BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=47kΩ) T

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Preliminary RFMD + TriQuint = Qorvo QPA4263A DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER The QPA4263A is a high performance SiGe HBT MMIC am

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www.DataSheet4U.com Product Specification PE4263 DIE SP6T UltraCMOS™ 2.6 V Switch 100 – 3000 MHz Figure 1. Functional Diagram Features • Three pin

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ISOCOM COMPONENTS ICPL2630 / ICPL2631 DESCRIPTION The ICPL2630 and ICPL2631 dual channel devices each consists of an infrared emitting diode, optica

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Date:- 9th September, 2014 Data Sheet Issue:- 3 Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180 Development Type No.: NX159JK160-180 A

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