www.DataSheet4U.com Features • • • • • .
Roithner LaserTechnik
RLCO-1064-2000-TO3 - High Power Infrared Laser Diode
RLCO-1064-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 1064 nm • Opti.
Seme LAB
BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BUV10N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.
Roithner
LD808-5-TO3 - High Power Laser Diode
LD808-5-TO3 (mA) (mA) 03.08.2010 ld808_58_to3.doc 1 of 2 03.08.2010 ld808_58_to3.doc 2 of 2 .
Roithner
RLCO-808-5000-TO3 - High Power Infrared Laser Diode
RLCO-808-5000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 808 nm • Optica.
Roithner LaserTechnik
RLCO-940-1000-TO3 - High Power Infrared Laser Diode
RLCO-940-1000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 940 nm • Optica.
Andesec
ADP-DFB-1368-SM-TO39 - DISTRIBUTED FEEDBACK LASER DIODE
ADP-DFB- 1368-SM-TO39 Datasheet December. 2013 Features DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with quantum well structure High.
Seme LAB
BFX84 - Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
BFX84 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. .
Seme LAB
BDX64C - Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
BDX64C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP.
Seme LAB
CV9507 - Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
CV9507 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package..
Seme LAB
SF_ZT92 - Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
ZT92 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. B.
Seme LAB
2N2243A - Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
2N2243A Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.
Vishay Siliconix
D2TO35 - Surface Mount Power Resistor
www.vishay.com D2TO35 Vishay Sfernice Surface Mount Power Resistor Thick Film Technology LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • .
Roithner
RLCO-808-3000-TO3 - High Power Infrared Laser Diode
RLCO-808-3000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 808 nm • Optica.
Roithner LaserTechnik
RLCO-940-2000-TO3 - High Power Infrared Laser Diode
RLCO-940-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 940 nm • Optica.
Roithner LaserTechnik
RLCO-940-4000-TO3 - High Power Infrared Laser Diode
RLCO-940-4000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 940 nm • Optica.
Roithner LaserTechnik
RLCO-940-5000-TO3 - High Power Infrared Laser Diode
RLCO-940-5000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 940 nm • Optica.
Roithner LaserTechnik
RLCO-980-3000-TO3 - High Power Infrared Laser Diode
RLCO-980-3000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 980 nm • Optica.
Roithner LaserTechnik
RLCO-980-5000-TO3 - High Power Infrared Laser Diode
RLCO-980-5000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 980 nm • Optica.
IXYS
VTO39-08io7 - Three Phase Rectifier Bridge
VTO 39 Three Phase Rectifier Bridge IdAV = 39 A VRRM = 600-1200 V Priliminary data VRSM VDSM V 700 900 1300 VRRM VDRM V 600 800 1200 Type VTO 39.
STMicroelectronics
STO33N60M6 - N-channel Power MOSFET
STO33N60M6 Datasheet N-channel 600 V, 105 mΩ typ., 25 A, MDmesh M6 Power MOSFET in a TO‑LL package TO-LL type A Drain (TAB) Gate(1) Driver source (.
