
TSCDF08065G1 - 650V SiC Merged PIN Schottky Diode
TSCDF08065G1
Taiwan Semiconductor
8A, 650V SiC Merged PIN Schottky Diode
FEATURES
● Max junction temperature 175°C ● MPS structure for high ruggedne
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TSCDF08065G1 Taiwan Semiconductor 8A, 650V SiC Me.
TSCDF08065G1 Distributor