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TSCDH30065G1 650V SiC Merged PIN Schottky Diode

TSCDH30065G1 Taiwan Semiconductor 30A, 650V SiC M.

Taiwan Semiconductor

TSCDH30065G1 - 650V SiC Merged PIN Schottky Diode

 TSCDH30065G1 Taiwan Semiconductor 30A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedn.
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