TSCDT08065G1 Taiwan Semiconductor 8A, 650V SiC Me.
Taiwan Semiconductor
TSCDT08065G1 - 650V SiC Merged PIN Schottky Diode
TSCDT08065G1 Taiwan Semiconductor 8A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedne.
