
TSCDT12065G1 - 650V SiC Merged PIN Schottky Diode
TSCDT12065G1
Taiwan Semiconductor
12A, 650V SiC Merged PIN Schottky Diode
FEATURES
● Max junction temperature 175°C ● MPS structure for high ruggedn
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TSCDT12065G1 Taiwan Semiconductor 12A, 650V SiC M.
TSCDT12065G1 Distributor