TT170N Datasheet | Specifications & PDF Download

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA E

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Netz-Thyristor-Modul Phase Control Thyristor Module Technische Information / technical information TT170N Key Parameters VDRM / VRRM ITAVM ITSM VT0

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