U304 Datasheet | Specifications & PDF Download

FEATURES ►SIP Package with Industry Standard Pinout ►Package Dimension: 19.5 x 10.2 x 7.6 mm (0.77”x 0.4”x 0.3”) ►Single and Dual Output Models ►I/O-I

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m o c . August 1997 U 4 t e e h S General Description a at .D w w w MOSEL VITELIC INC. Preliminary MSU3022/U3032/U3042 60 /90 /120 Voice Smart Pre

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m o c . August 1997 U 4 t e e h S General Description a at .D w w w MOSEL VITELIC INC. Preliminary MSU3022/U3032/U3042 60 /90 /120 Voice Smart Pre

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TOTAL POWER INT'L MAU300 Series 2 Watt Ultra Miniature High Isolation SIP DC/DC SinCgloen&verDteurasl wOiuthtput Key Features l SMT Technology l Min

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m o c . August 1997 U 4 t e e h S General Description a at .D w w w MOSEL VITELIC INC. Preliminary MSU3022/U3032/U3042 60 /90 /120 Voice Smart Pre

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p-channel JFETs designed for • • • • Analog Switches • Commutators • Choppers H Siliconix Performance Curves PSA/PSB/PSC See Section 4 BENEFITS • Low

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www.DataSheet4U.com PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040 Teletext Processors www.DataSheet4U.com Edition Dec. 9, 1996 62

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Technology Licensed from International Rectifier APU3048 DUAL SYNCHRONOUS PWM CONTROLLER CIRCUITRY AND LDO CONTROLLER PRELIMINARY DATA SHEET FEATURE

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RU3041M2 N-Channel Advanced Power MOSFET Features • 30V/40A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V RDS (ON) =10mΩ(Typ.)@VGS=2.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU304F/305F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V

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www.DataSheet4U.com PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040 Teletext Processors www.DataSheet4U.com Edition Dec. 9, 1996 62

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RU3040M2 N-Channel Advanced Power MOSFET Features • 30V/40A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V RDS (ON) =8.2mΩ(Typ.)@VGS=4.5V RDS (ON) =16.8mΩ(Typ.) @VGS

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ADVANCE INFORMATION TPU 3041 Cyrillic/Greek Teletext Processor MICRONAS Edition Sept. 27, 1995 6251-415-3AI TPU 3041 Contents Page 3 3 4 4 5 5 6 9

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RU3040M N-Channel Advanced Power MOSFET Features • 30V/40A, RDS (ON) =12mΩ(Typ.)@VGS=10V RDS (ON) =17.5mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desi

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RU304B N-Channel Advanced Power MOSFET MOSFET Features • 30V/4A, RDS (ON) =44mΩ (Typ.) @ VGS=4.5V RDS (ON) =53mΩ (Typ.) @ VGS=2.5V • Low RDS (ON) • S

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