ULTRAFAST Datasheet | Specifications & PDF Download

600 V, 1.0 A Ultrafast Rectifier MURHS160T3, NRVUHS160V, SURHS8160 Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating J

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SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Surge Current Capability  High Reliability  Ideally Suited for

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® WON-TOP ELECTRONICS US1A – US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Pb Features  Glass Passivated Die Construction  Ideally Su

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D92-02 ® Pb Free Plating Product D92-02 TO-3P/TO-247AD 0.142(3.60) 0.125(3.20) 0.640(16.25) 0.620(15.75) Pb Ultrafast Recovery Rectifier Unit: in

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SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

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BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 Product data sheet 1. Product profile 1.1 General description Ult

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400V, 20A ULTRAFAST DUAL RECTIFIERS SF20A400HPI Ultrafast Recovery Rectifier Features  Low forward voltage drop and leakage current  Ultrafast re

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IXDD414PI / 414YI / 414CI / 414SI 14 Amp Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and compatibility TM of CMOS and IXYS

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Surge Current Capability  High Reliability  Ideally Suited for

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SFA66UP30DN Ultrafast Dual Diode SFA66UP30DN 66A, 300V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: Trr=49ns (max) • Typical Forward Volt

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MUR490E, MUR4100E MUR4100E is a Preferred Device SWITCHMODEt Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability These state−o

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UF300 THRU UF3010 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES l Plastic package has Underwriters Laborator

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FMU22U thru FMU24U ® Pb Free Plating Product FMU22U thru FMU24U Pb Doubler Polarity Ultrafast Recovery Rectifier Diodes Features Fast switching f

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WTE POWER SEMICONDUCTORS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Cap

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INTEGRATED CIRCUITS DIVISION Features • 1.5A Peak Output Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Operating Temperature R

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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NUR460 Ultrafast power diode Rev. 2 — 20 July 2011 Product data sheet 1. Product profile 1.1 General description Ultrafast epitaxial power diode in a

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WTE POWER SEMICONDUCTORS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Cap

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Ultrafast Rectifier INCHANGE Semiconductor BYV29X-600 FEATURES ·With TO-220F packaging ·600V blocking voltage ·Low forward voltage drop ·Fast switch

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