Ultra-High-Speed Datasheet | Specifications & PDF Download

TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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TPM2015Q Automotive Single-Channel Ultra-Highspeed GaN Predriver Features Description • AEC-Q100 Grade-1 Qualified (TPM2015Q Only) • 5-V Single Sup

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TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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PC410 PC410 s Features 1. Mini-flat package 2. Ultra-high speed response ( t PLH , t PHL : TYP. 50ns at R L = 350Ω ) 3. Isolation voltage between inp

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Ordering number : ENA1832 RD2006FR SANYO Semiconductors DATA SHEET RD2006FR Features • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Swi

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FEATURES n Voltage Noise 1.1nV/√Hz Max at 1kHz 0.85nV/√Hz Typ at 1kHz 1.0nV/√Hz Typ at 10Hz 35nVP-P Typ, 0.1Hz to 10Hz n Voltage and Current

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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BAS16W1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. Thes

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a FEATURES 500 MHz Driver Operation Driver Inhibit Function 100 ps Edge Matching Guaranteed Industry Specifications 50 ⍀ Output Impedance >1.5 V/ns Sl

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a FEATURES Excellent Hold Mode Distortion into 250 ⍀ –88 dB @ 30 MSPS (2.3 MHz VIN) –83 dB @ 30 MSPS (12.1 MHz VIN) –74 dB @ 30 MSPS (19.7 MHz VIN) 16

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Data Sheet 1.5 GHz, Ultrahigh Speed Op Amp AD8000 FEATURES High speed 1.5 GHz, −3 dB bandwidth (G = +1) 650 MHz, full power bandwidth (G = +2, VO =

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www.DataSheet4U.com Ordering number : ENN7405 ECH8605 P-Channel Silicon MOSFET ECH8605 Ultrahigh-Speed Switching Applications Features • • • Packa

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P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

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www.DataSheet4U.com Ordering number : ENN7532 SCH1302 P-Channel Silicon MOSFET SCH1302 Ultrahigh-Speed Switching Applications Features • • • Packa

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www.DataSheet4U.com Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features • • • Packa

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr =

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse recovery time

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