VBP112MC100-4L Datasheet | Specifications & PDF Download

VBP112MC100-4L N-Channel 1200V (D-S) SiC Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18

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