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VBP112MC60 - N-Channel MOSFET
VBP112MC60 N-Channel 1200V (D-S) SiC Power MOSFET
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PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC)
1200 VGS = 18V
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VBP112MC60 N-Channel 1200V (D-S) SiC Power MOSFET .
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