VTS Datasheet | Specifications & PDF Download

www.DataSheet4U.com VTSR, VSSR, VSOR Vishay Thin Film SURFACE MOUNT NETWORKS Molded, 25 or 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES •

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Features n Bidirectional TVS n ESD protection 30 kV n Replacement for MLV (0402) n Low Clamping Voltage n Low Leakage Current Applications n Cellular

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Innogration (Suzhou) Co., Ltd. 1200W, 100V RF Power N-channel MOSFETs Description The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for puls

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PRODUCT INFORMATION APPLICATIONS: • Television/VCR • Multi-media adapters • Video signal converters RF Components Group VTST-Series NTSC/PAL Electro

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DATA SHEET www.onsemi.com Trench Schottky Rectifier, Very Low Leakage NRVTSS3100E Features • Fine Lithography Trench−based Schottky Technology for Ve

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Features n Bidirectional TVS 5 V n Low capacitance - 0.3 pF n ESD protection >15 kV n Replacement for MLV (0402) n Low Clamping Voltage Applications

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Features n Bidirectional TVS 5 V n ESD protection >30 kV n Replacement for MLV (0402) n Low Clamping Voltage n Low Leakage Current Applications n Mot

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Innogration (Suzhou) Co., Ltd. 900W, 100V RF Power N-channel MOSFETs Description The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed

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NRVTS8120EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Volt

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VTS Process Photodiodes PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic

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New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low

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NRVTSM260E Surface Mount Trench Schottky Power Rectifier POWERMITE® Power Surface Mount Package Features • Low Profile − Maximum Height of 1.1 mm • S

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DATA SHEET www.onsemi.com Trench Schottky Rectifier, Very Low Leakage NRVTSS5100E, NRVTSAF5100E SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS Fea

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NRVTS1260EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Lea

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NRVTS1260EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Lea

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NTS10100EMFS, NRVTS10100EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very L

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NTS245ESF, NRVTS245ESF, NTSM245ESF, NRVTSM245ESF Product Preview Very Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography

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NRTSAF260E, NRVTSAF260E Very Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Ver

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VTS Process Photodiodes PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic

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www.DataSheet4U.com VTSRC, VSSRC, VSORC-AA Vishay Thin Film 25 or 50 Mil Pitch, T-Filter Resistor/Capacitor Networks FEATURES • Resistors and capaci

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