WPMTEK Datasheet | Specifications & PDF Download

WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

(28 views)

WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Integrated in OVP&OCP products provider WPE0501D5 Ultra Low Capacitance Bi-directional TVS Diode Description Mechanical Characteristics The WPE050

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WTM2302 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Integrated in OVP&OCP products provider CLAMP0521P 1-Line Bi-directional Ultra-low Capacitance TVS Diode Description Mechanical Characteristics Th

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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Integrated in OVP&OCP products provider WPE0501P1 1-Line Bi-directional Low Capacitance TVS Diode Description Mechanical Characteristics The WPE05

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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Integrated in OVP&OCP products provider CLAMP0504DT 4-Line Ultra Low Capacitance TVS Diode Array Description Mechanical Characteristics The CLAMP0

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Integrated in OVP&OCP products provider SOTXXC 3.3V~36V 2Line Uni-directional TVS DiodeArray Description Mechanical Characteristics The SOTXXC is

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Integrated in OVP&OCP products provider 10BJ Series 1000W Transient Voltage Suppressor Description TVS diodes can be used in a wide range of applica

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Integrated in OVP&OCP products provider SOTXXC 3.3V~36V 2Line Uni-directional TVS DiodeArray Description Mechanical Characteristics The SOTXXC is

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WL9003 High PSRR 300mA Low-Dropout Linear Voltage Regulator Features • Low Power Consumption: 70uA (Typ) • Maximum Output Current: 300mA • Small Drop

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Integrated in OVP&OCP products provider WTD3201-XXB Bidirectional Ultralow Capacitance TVS ARRAY WTD3201-03B,WTD3201-05B,WTE3201-08B,WTD3201-12B, WTD

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