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SB5100 - 5.0A SCHOTTKY BARRIER DIODE
Z ibo Seno Electronic Engineering Co., Ltd. SB520 – SB5200 5.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc.SR5150 - 5.0 Amp Schottky Barrier Diode
Z ibo Seno Electronic Engineering Co., Ltd. SR520 – SR5200 5.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction.SB2200 - 2.0A SCHOTTKY BARRIER DIODE
Z ibo Seno Electronic Engineering Co., Ltd. SB220 – SB2200 2.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc.SR5200 - (SR520 - SR5200) 5.0 Amp Schottky Barrier Diode
Z ibo Seno Electronic Engineering Co., Ltd. SR520 – SR5200 5.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction.SB5150 - 5.0A SCHOTTKY BARRIER DIODE
Z ibo Seno Electronic Engineering Co., Ltd. SB520 – SB5200 5.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc.10A05G - 10.0A GLASS PASSIV ATED RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High .GBJ20K - 20A GLASS PASSIVATED BRIDGE RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features · Glass Passivated Die Construction · High Case Dielectric Strength of 1500VRMS · Low Reverse Le.GBJ20M - 20A GLASS PASSIVATED BRIDGE RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features · Glass Passivated Die Construction · High Case Dielectric Strength of 1500VRMS · Low Reverse Le.10A1 - 10.0A GLASS PASSIV ATED RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High .4N60 - Power MOSFET
Z ibo Seno Electronic Engineering Co., Ltd. 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 4N60 4N65 is a high voltage MOSFET and is desi.SB2100 - 2.0A SCHOTTKY BARRIER DIODE
Z ibo Seno Electronic Engineering Co., Ltd. SB220 – SB2200 2.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc.SB560 - 5.0A SCHOTTKY BARRIER DIODE
Z ibo Seno Electronic Engineering Co., Ltd. SB520 – SB5200 5.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc.10A8 - 10.0A GLASS PASSIV ATED RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High .10A4 - 10.0A GLASS PASSIV ATED RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High .10A6 - 10.0A GLASS PASSIV ATED RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High .MURB530 - 5.0A GLASS PASSIVATED SUPERFAST RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. MURB5 10 – MURB5 60 5 .0A GLASS PASSIVATED SUPERFAST RECTIFIER Features Glass Passivated Die Construct.LLB10S - 0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. LLB05S – LLB10S Features 0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Glass Passivated Die C.10A10 - 10.0A GLASS PASSIV ATED RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High .4N65 - Power MOSFET
Z ibo Seno Electronic Engineering Co., Ltd. 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 4N60 4N65 is a high voltage MOSFET and is desi.UG4KB40 - 4.0A BRIDGE RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd. Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability Hi.