anti-EMI Datasheet | Specifications & PDF Download

HT6873 EMI 3.5WEMID  ・EDMA， Po=3.5 W (VDD=5.0V, RL=4Ω, THD+N=10%) Po=3.0 W (VDD=3.7V, RL=2Ω, THD+N=10%) ・EMI a) (AROC, Active edge Ringing and

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AiT Semiconductor Inc. www.ait-ic.com A2331 AUDIO AMPLIFIER 3W ANTI-CLIP CLASS-D DESCRIPTION FEATURES A2331 is a 3-W (VDD=5.0V, RL=4Ω) high effici

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HT6808 Ultra Low-EMI Anti-Clipping Class D Audio Amplifier 3W Ultra Low-EMI Anti-Clipping Stereo Class D Audio Power Amplifier „ FEATURES ・ Anti-Clip

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AiT Semiconductor Inc. www.ait-ic.com A2323 AUDIO AMPLIFIER 3W ANTI-CLIP CLASS-D AUDIO POWER AMPLIFIER DESCRIPTION FEATURES A2323 is a 3-W (VDD=5.

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HT6871 TEL:0755-82863877 13242913995 E-MAIL:panxia168@126.com EMI D 3WEMID ・(Anti-Clipping Function, ACF) ・EMI ・， ・ 3.0 W×1ch (VDD=5.0V, RL=3Ω,

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HT6879 Low-EMI Anti-Clipping Class D Audio Amplifier 3.5W Ultra Low-EMI Anti-Clipping Mono Digital Class D Audio Power Amplifier with Digital Volume

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BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability The BUD42D is a state−of−

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HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high

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SKKQ 800/14E SEMiSTART Antiparallel thyristors for softstart SKKQ 800/14E Features • Compact design • Pressure contact technology Typical Application

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HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGT

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