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ba5n10

ba5n10 DataSheet

Excelliance MOS

EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 37 Hits  / W  p.1      ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)  PARAMETER  SYMBOL TEST CONDITIONS  EMBA5N10A LIMITS  UNIT MI...
Excelliance MOS

EMBA5N10G - MOSFET

 · 9 Hits ...
Excelliance MOS

EMBA5N10CS - MOSFET

 · 7 Hits ...
Excelliance MOS

EMBA5N10V - MOSFET

 · 5 Hits ...
Excelliance MOS

EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 4 Hits 75 UNIT °C / W 2019/10/2 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMBA5N10AS LIMI...
CYStech

MTBA5N10FP - N-Channel Enhancement Mode Power MOSFET

 · 3 Hits • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating volt...
CYStech

MTBA5N10V8 - N-Channel Enhancement Mode Power MOSFET

 · 3 Hits • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plat...
CYStech

MTBA5N10J3 - N-Channel Enhancement Mode Power MOSFET

 · 2 Hits • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package RDSON(MAX) 150mΩ Equivalent Circuit MTBA5N10J3 Outline ...
CYStech

MTBA5N10Q8 - N-Channel Enhancement Mode Power MOSFET

 · 2 Hits • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Symbol MTBA5N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTBA5N1...
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