capability Datasheet | Specifications & PDF Download

Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A VC

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TXN/TYN 0512 ---> TXN/TYN 1012 SCR . . . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED

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Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A VC

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Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sa

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www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES

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Primary lithium battery BA 5567 3 V Primary lithium sulfur High drain capability dioxide (Li-SO2) 1/3 C-size spiral cell ■ ■ ■ ■ ■ ■ ■ ■

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Primary lithium batteries G 04/3 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability 1 /2 AA - size spiral cell Benefits • High and

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PRELIMINARY ISD5100 SERIES SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY -1- Publication Rele

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Advanced Technical Information IXRP 15N120 IXRA 15N120 www.DataSheet4U.com IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat

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IGBT High Speed Short Circuit SOA Capability mêÉäáãáå~êó=Ç~í~=ëÜÉÉí IXSH 50N60B V`bp I`OR V`bEë~íF = 600 V = 75 A = 2.5 V Symbol VCES VCGR VGES VG

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PRELIMINARY ISD5100 SERIES SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY -1- Publication Rele

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• 1N3016B THRU 1N3045B AVAILABLE IN JANHC PER MIL-PRF-19500/115 • 1 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH

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Primary lithium batteries G 06/2 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability AA - size spiral cell Benefits • High and stab

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PRELIMINARY ISD5100 SERIES SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY -1- Publication Rele

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PRELIMINARY ISD5100 SERIES SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY -1- Publication Rele

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High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE(sat) t fi TO-24

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Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Symbol www

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• 1N3016B THRU 1N3045B AVAILABLE IN JANHC PER MIL-PRF-19500/115 • 1 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH

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Primary lithium batteries G 26 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability D - size spiral cell Benefits • High and stable

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