| Part Number | Description | Manufacture |
|---|---|---|
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NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packi |
 UTC |
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20W audio power amplifier 25 Vcc=±20V 20 15 10 Vcc=±15V 5 0 RL=4Ω fo=1kHz 0 5 10 15 20 25 30 Po(W) Po(W) P D (W) CD1875CZ Po --- Vcc RL=8Ω 35 THD=1％ 30 25 20 15 10 5 0 0 5 10 15 20 25 Vcc(±V) 30 50 RL=8Ω 45 fo=1kHz 40 PD --- Po 35 30 Vcc=±30V 25 20 Vcc=±25V |
 ETC |
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30W Audio power amplifier 5k R6 200k YD1875 |
 Wuxi Youda electronics |
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NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packi |
UTC |
