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Schottky Barrier Rectifiers Production specification SL22F--SL245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for Paralle

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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Z01 Datasheet Standard 1 A Triacs A2 G A1 A2 A1 A2 G SOT-223 A1 G A2 TO-92 A2 A1 G SMBflat-3L Features • On-state rms current, IT(RMS) 1 A • Re

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IP5328P Fully-Integrated Bi-directional PD3.0 and Fast Charge Power Bank SOC with Multiple Input and Output Ports Features  Support multiple ports

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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STM32F103x8 STM32F103xB Medium-density performance line ARM®-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces D

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STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features „ Multipower BCD technology „ Very high operating voltage range (±50

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XB4908 SERIES One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION The XB4908 SERIES product is a high i ntegration solution for li

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M3TEK IT76630M 23V/3A High Efficiency Synchronous Rectified Step-Down DC/DC Converter DESCRIPTION The IT76630M is a high efficiency synchronous ste

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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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OB2223 High Precision Low Cost MCM Power Switch GENERAL DESCRIPTION OB2223 is a high performance, high precision and low cost PWM Power switch for No

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2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized

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Machine Translated by Google Shenzhen Fuman Electronics Group Co., Ltd. SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. IC LTH7R. (File No.: S&CIC1

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OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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TDA7292 40 W + 40 W stereo amplifier with mute and standby Datasheet − production data Features ■ Wide supply voltage range (up to ± 33 V) ■ Split

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