.
Advanced Micro Devices
28F256 - 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory
FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce.
Mitsubishi
M5M29FT800RV-10 - 8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY.
Mitsubishi
M5M29FT800FP-80 - 8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY.
Aeroflex
ACT-F2M32A - High Speed 64 Megabit Sector Erase FLASH Multichip Module
ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s 4 Low Voltage/Power AM.
STMicroelectronics
M28F512 - 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE.
Hynix Semiconductor
HY29F040A - 512K x 8-bit CMOS 5.0 volt-only/ Sector Erase Flash Memory
HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES · 5.0 V ± 10% Read, Program, and Erase - Minimizes system-le.
Mitsubishi
M5M29FT800RV-80 - 8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY.
Mitsubishi
M5M29FB800VP-12 - 8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY.
Mitsubishi
M5M29FB800VP-80 - 8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY.
Mitsubishi
M5M29FB800FP-12 - 8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY.
AMD
Am29F800BB - CMOS 5.0 Volt-only Sector Erase Flash Memory
PRELIMINARY Am29F800BT/Am29F800BB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s S.
AMD
Am29F800BT - CMOS 5.0 Volt-only Sector Erase Flash Memory
PRELIMINARY Am29F800BT/Am29F800BB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s S.
MICRON
N25Q032A - 3V Multiple IO 4KB Sector Erase
32Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q032A Features • • • • • • S.
Advanced Micro Devices
AM29F016 - 16-Megabit (2/097/152 x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory
FINAL Am29F016 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 Volt ± 10% for read and.
Aeroflex Circuit Technology
ACTF2M32A - ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module
ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY).
Aeroflex Circuit Technology
ACTF4M32A - ACT-F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module
ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module Advanced Features www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY) – Hard.
