| Part Number | Description | Manufacture |
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PNP Transistor c Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30 |
 INCHANGE |
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PNP SILICON PLANAR POWER TRANSISTOR w Mounting Position (for 1sec, R.H.30% ,Ta=25ºC; Pulse Test: Pulse Width 300µs, Duty Cycle2%) ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter sustaining Voltage |
 CDIL |
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Complementary Power Transistors Vdc Vdc Adc Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C Derate above 25°C 10 20 PD 36 1.67 Watts W/°C Watts W/°C °C PD |
 ON |
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SILICON POWER TRANSISTOR T /W /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage |
 SavantIC |
