| Part Number | Description | Manufacture |
|---|---|---|
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N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤100mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature an |
 INCHANGE |
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N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤95mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and |
INCHANGE |
|
|
DIGITAL AUDIO MOSFET • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI • 175°C operating junction temperature for ruggedne |
 International Rectifier |
|
|
DIGITAL AUDIO MOSFET • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedne |
International Rectifier |
