mid-speed Datasheet | Specifications & PDF Download

LN1134 High Speed Low Dropout Middle Current Voltage Regulators ■ General Description The LN1134 series are highly precise, low noise, positive volta

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P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/20/25/35 ns (Commercial/Industria

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P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45/

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P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45/

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P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/I

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FEATURES Fast Access Times - 10/12/15/20 ns Low Power Operation Single 3.3V ± 0.3V Power Supply 2.0V Data Retention Easy Memory Expansion Us

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P3C1011 HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (

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P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (C

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 12/15/20/25/35 ns (Industrial) –

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P93U422 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Universal 256 x 4 Static RAM One part, the P93U422, replaces the following bipolar and CMOS parts:

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FEATURES High Speed (Equal Access and Cycle Times) — 15/20/25 ns (Commercial) — 20/25/35 ns (Industrial) — 20/25/35/45/55/70 ns (Military) Low Power S

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P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

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FEATURES High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) CMOS for Low Power – 495

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 12/15/20/25/35 ns (Industrial) –

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P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 25/35ns (Commercial) –

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P4C1041 HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 25/35ns (Commercial) –

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