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PC123/PC123F PC123/PC123F s Features 1. Conform to European Safety Standard 2. Internal isolation distance : 0.4mm or more 3. High collector-emitter

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GD9Fx1GxF3A GD9Fx1GxF3A DATASHEET 1G-bit 2K+64BPageSize DS-GD9Fx1GxF3A-Rev1.8 1 February 2023 GD9Fx1GxF3A Contents 1. FEATURES

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer •

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataShe

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Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Fla

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PC110L/PC111L/PC112L/PC113L PC110L/PC111L PC112L/PC113L s Features 1. Long creepage distance type ( Creepage distance : 8mm or more ) *1 2. Internal

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FEDD5118160F-01 1 Semiconductor MSM5118160F 1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE This version: June. 2000 Previous version : 

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FEDD5118165F-01 1 Semiconductor MSM5118165F DESCRIPTION This version: June. 2000 Previous version :  1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PA

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E2G0009-17-41 ¡ Semiconductor MSM511000C/CL ¡ Semiconductor This version: Jan. 1998 MSM511000C/CL Previous version: May 1997 1,048,576-Word ¥ 1-Bit

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E2L0030-17-Y1 ¡ Semiconductor MSM514222B ¡ Semiconductor 262,263-Word ¥ 4-Bit Field Memory This version: Jan. 1998 MSM514222B Previous version: Dec.

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E2L0029-17-Y1 ¡ Semiconductor MSM514221B ¡ Semiconductor 262,263-Word ¥ 4-Bit Field Memory This version: Jan. 1998 MSM514221B Previous version: Dec.

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www.DataSheet4U.com PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 Features • Single device supports asy

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E2G0123-17-61 ¡ Semiconductor MSM51V17400D/DSL ¡ Semiconductor This version: Mar. 1998 MSM51V17400D/DSL Pr el im in ar y 4,194,304-Word ¥ 4-Bit DY

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Semiconductor MSM5117405D This version:Apr.1999 4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405D is a

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