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501N04A

Directed Energy
Part Number 501N04A
Manufacturer Directed Energy
Title RF Power MOSFET
Description Directed Energy, Inc. An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg an...
Features SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°...

Datasheet PDF File 501N04A Datasheet

501N04A   501N04A   501N04A  




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