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MOSFET Matched Datasheet



Part Number Description Manufacture
A1SHB
P-Channel Enhancement Mode Power MOSFET

● VDS = -20V,ID = -2.6A RDS(ON) 160mΩ @ VGS=-2.5V RDS(ON) 120mΩ @ VGS=-4.5V D G S Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment Application
● P
Manufacture
Bruckewell
A2SHB
N-Channel MOSFET
 
■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  
■High dense cell design for extremely low RDS(ON)  
■Rugged and reliable  
■Lead free product is acquired  
■SOT-23 Package  
■Marking Code: A2SHB   Case Material: Molded Plastic.   UL Flammability Classification Rat
Manufacture
HAOHAI
B20N03
N-Channel MOSFET
J W W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB20N03V ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC CHIPSET-IC.COM Drain‐Source Breakdown Voltage Gate Threshold
Manufacture
Excelliance MOS
IRF3205
N-Channel Trench Process Power MOSFET Transistor

● VDS=55V; ID=105A@ VGS=10V; RDS(ON)6.0mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application G DS TO-220CB Top View Schemat
Manufacture
Thinki Semiconductor
K3878
N-Channel MOSFET
nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
Manufacture
Toshiba
IRFZ44N
N-Channel MOSFET Transistor

·Drain Current
  –ID=49A@ TC=25℃
·Drain Source Voltage- : VDSS= 55V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max)
·Fast Switching DESCRIPTION
·Designed for low voltage, high speed switching applications in power supplies, converters
Manufacture
INCHANGE
20N60
600V N-CHANNEL POWER MOSFET
* RDS(ON) 0.45Ω @ VGS=10V, ID=10A * High switching speed
 SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
 ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 20N60L-T47-T 20N60G-T47-T 20N60L-T3P-T 20N60G-T3P-T Pin Assignme
Manufacture
UTC
10N60
N-Channel Power MOSFET
RDS(ON) = 0.8Ω@VGS = 10V Ultra low gate charge(57nC max.) Low reverse transfer capacitance (CRSS = 18pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (10N60A)
Manufacture
nELL
K10A60D
N-Channel MOSFET
y under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper
Manufacture
Toshiba
P75NF75
N-Channel MOSFET
Type STB75NF75 STP75NF75 STP75NF75FP VDSS 75V 75V 75V RDS(on) 0.011Ω 0.011Ω 0.011Ω ID 80A(1) 80A(1) 80A(1) TO-220 3 1 2 1 3 2 TO-220FP 1. Current limited by package

■ Exceptional dv/dt capability 100% avalanche tested 3 1 Description This Po
Manufacture
STMicroelectronics

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