• Part: HYG012N03LR1P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 1.30 MB
HYG012N03LR1P Datasheet (PDF) Download
HOOYI
HYG012N03LR1P

Key Features

  • 30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V
  • 100% Avalanche Tested
  • Reliable and Rugged
  • Lead-Free and Green Devices Available (RoHS Compliant)
HYG012N03LR1P datasheet preview

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