Datasheet Details
| Part number | HYG012N03LR1P |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.30 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG012N03LR1P-HOOYI.pdf |
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Overview: HYG012N03LR1P/B N-Channel Enhancement Mode MOSFET Feature 30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.
| Part number | HYG012N03LR1P |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.30 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG012N03LR1P-HOOYI.pdf |
|
|
|
TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P G012N03 XYMXXXXXX B G012N03 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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HYG012N03LR1C2 | N-Channel Enhancement Mode MOSFET | HUAYI |
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