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HYG012N03LR1B - N-Channel Enhancement Mode MOSFET

Download the HYG012N03LR1B datasheet PDF. This datasheet also covers the HYG012N03LR1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P G012N03 XYMXXXXXX B G012N03 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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Note: The manufacturer provides a single datasheet file (HYG012N03LR1P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG012N03LR1B
Manufacturer HOOYI
File Size 1.30 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG012N03LR1B Datasheet

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Other Datasheets by HOOYI

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG012N03LR1P/B N-Channel Enhancement Mode MOSFET Feature  30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Battery management Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P G012N03 XYMXXXXXX B G012N03 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.