• Part: HYG012N03LR1C2
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.35 MB
HYG012N03LR1C2 Datasheet (PDF) Download
HUAYI
HYG012N03LR1C2

Key Features

  • 30V/180A RDS(ON)= 0.9 mΩ(typ.) @VGS = 10V RDS(ON)=1.3 mΩ(typ.) @VGS = 4.5V
  • 100% Avalanche Tested
  • Reliable and Rugged
  • Halogen- Free Devices Available
HYG012N03LR1C2 datasheet preview

Datasheets by Manufacturer

Part Number Manufacturer Description
HYG012N03LR1B HOOYI N-Channel Enhancement Mode MOSFET