• Part: A1SHB
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Bruckewell Technology
  • Size: 385.32 KB
A1SHB Datasheet (PDF) Download
Bruckewell Technology
A1SHB

Description

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
  • G S Schematic diagram
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Marking and pin assignment
A1SHB reference image

Representative A1SHB image (package may vary by manufacturer)