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A1SHB

Manufacturer: Bruckewell Technology
A1SHB datasheet preview

Datasheet Details

Part number A1SHB
Datasheet A1SHB-Bruckewell.pdf
File Size 385.32 KB
Manufacturer Bruckewell Technology
Description P-Channel Enhancement Mode Power MOSFET
A1SHB page 2 A1SHB page 3

A1SHB Overview

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

A1SHB Key Features

  • VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

A1SHB from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
YANGJING Logo A1SHB P-Channel MOSFET YANGJING
H-M Semiconductor Logo A1SHB P-Channel Trench Power MOSFET H-M Semiconductor
Vanguard Semiconductor Logo A1SHB P-Channel Advanced Power MOSFET Vanguard Semiconductor
Kexin Logo A1SHB P-Channel MOSFET Kexin
Bruckewell Technology logo - Manufacturer

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