| Part Number | A3G26H502W17S |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | RF Power GaN Transistor |
| Description | NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev. 1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF powe... |
| Features |
High terminal impedances for optimal broadband performance Advanced high performance in--package Doherty Improved linearized error vector magnitude with next generation signal Able to withstand extremely high output VSWR and broadband operati... |
| Datasheet |
 A3G26H502W17S Datasheet
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