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Transistor Matched Datasheet



Part Number Description Manufacture
C3205
NPN Transistor
Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J
Manufacture
SeCoS
3DD13009
NPN Transistor
perature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON
Manufacture
INCHANGE
A1270
PNP Silicon Transistor
ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at
  –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2
Manufacture
SEMTECH
PC817
Phototransistor Optocouplers
er-Collector Voltage Total Power Dissipation Isolation Voltage Operating Temperature Storage Temperature Soldering Temperature Symbol IF VR P PC IC VCEO VECO Ptot Viso Topr Tstg Tsol Value 50 6 70 150 50 35 6 200 5000 -30~+100 -55~+125 260 Un
Manufacture
WUXI
2N2222
NPN Silicon Transistor
Manufacture
SEMTECH
C1815
Silicon NPN Transistor
nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de
Manufacture
Toshiba Semiconductor
IRF3205
N-Channel Trench Process Power MOSFET Transistor

● VDS=55V; ID=105A@ VGS=10V; RDS(ON)6.0mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application G DS TO-220CB Top View Schemat
Manufacture
Thinki Semiconductor
BC547
NPN Transistor

• Low current (max. 100 mA)
• Low voltage (max. 65 V). APPLICATIONS
• General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. PINNING PIN 1 2 3 emitter base collec
Manufacture
Philips
2SC5200
NPN TRANSISTOR
solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a
Manufacture
Toshiba Semiconductor
IRFZ44N
N-Channel MOSFET Transistor

·Drain Current
  –ID=49A@ TC=25℃
·Drain Source Voltage- : VDSS= 55V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max)
·Fast Switching DESCRIPTION
·Designed for low voltage, high speed switching applications in power supplies, converters
Manufacture
INCHANGE

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