2SC1906 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Planar Application - VHF amplifier - Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 - 50 300 150 - 55 to +150 Unit V V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 - 40 600 - - - - - Typ - - - - - 1000 1.0 0.2 10 33 18 Max - - - 0.5 - - 2.0 1.0 25 - - MHz p F V ps d B d B Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz I C = 20 m A, IB = 4 m A VCB = 10 V, IC = 10 m A, f = 31.8 MHz VCE = 10 V, I C = 5 m A VCE = 10 V, I C = 5 m A f = 45 MHz f = 200 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Collector to emitter saturation voltage Base time constant Power gain V(BR)EBO I CBO h FE f T Cob VCE(sat) rbb’ PG - CC Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 Collector Current IC (m A) Typical Output Characteristics 20 = 0 30 16 m W 80...