Datasheet Details
| Part number | 2SC1906 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.39 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1906-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC1906.
| Part number | 2SC1906 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.39 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1906-INCHANGE.pdf |
|
|
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·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -50 mA 0.3 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC1906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1906 | Silicon NPN Transistor | Hitachi Semiconductor |
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