| Part Number | BLF4G10S-120 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | UHF power LDMOS transistor |
| Description | 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at... |
| Features |
s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 = −61 dBc (typ) x ACPR600 = −72 dBc (typ) x EVMrms = 1.5 % (typ) s...
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| Datasheet |
 BLF4G10S-120 Datasheet
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