| Part Number | Description | Manufacture |
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NPN Transistor istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Sa |
 INCHANGE |
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NPN Transistor age IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.0A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Em |
INCHANGE |
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NPN Transistor perature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON |
INCHANGE |
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NPN Transistor Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J |
 SeCoS |
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N-Channel MOSFET Transistor ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters |
INCHANGE |
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PNP Silicon Transistor ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2 |
 SEMTECH |
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NPN Silicon Transistor |
SEMTECH |
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Epitaxial Planar Silicon Transistor |
 Sanyo |
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Phototransistor Optocouplers er-Collector Voltage Total Power Dissipation Isolation Voltage Operating Temperature Storage Temperature Soldering Temperature Symbol IF VR P PC IC VCEO VECO Ptot Viso Topr Tstg Tsol Value 50 6 70 150 50 35 6 200 5000 -30～+100 -55～+125 260 Un |
 WUXI |
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Silicon NPN Transistor High Collector Current.(IC= 500mA). Complementary To S8550. Pb Lead-free Excellent HFE Linearity. High total power dissipation.(PC=300mW). S8050 APPLICATIONS High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y |
 GME |
| Total 70395 results |
