Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) - Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A - Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A - 100% tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
Representative 3DD13009 image (package may vary by manufacturer)
| Part Number | Manufacturer | Description |
|---|---|---|
| 3DD13009A9 | Huajing Microelectronics | Silicon NPN bipolar transistor |
| 3DD13009NL | JILIN SINO-MICROELECTRONICS | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 3DD13009 | LGE | NPN Transistor |
| 3DD13009E8 | Huajing Microelectronics | Silicon NPN bipolar transistor |
| 3DD13009M | JILIN SINO-MICROELECTRONICS | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 3DD13009N | JILIN SINO-MICROELECTRONICS | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 3DD13009AN | Huajing Microelectronics | Silicon NPN Transistor |
| 3DD13009 | Galaxy Microelectronics | NPN Silicon Epitaxial Planar Transistor |
| 3DD13009B8 | Huajing Microelectronics | Silicon NPN bipolar transistor |
| 3DD13009F8 | Huajing Microelectronics | Silicon NPN bipolar transistor |
