High breakdown voltage
High switching speed
High current capability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Energy-saving ligh
High frequency switching power supply
High frequency power transform
ABSOLUTE MA
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Energy-saving ligh ·High frequency switching power supply ·High frequency power transform
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current
IBM
Base Current-Peak
VALUE UNIT
700
V
400
V
9
V
12
A
24
A
6
A
12
A
TO-220
100
PC
Collector Power Dissipation TC=25℃
W
TO-3PN
120
Ti
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
150
℃
-
3DD13009N Datasheet
