3DD13009N is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
JILIN SINO-MICROELECTRONICS |
3DD13009N | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
JILIN SINO-MICROELECTRONICS |
3DD13009NL | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
LGE |
3DD13009 | NPN Transistor |
Galaxy Microelectronics |
3DD13009 | NPN Silicon Epitaxial Planar Transistor |
Huajing Microelectronics |
3DD13009A8 | Silicon NPN Transistor |
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A ICBO Collector Cutoff Current VCB= 700V; IE=0 IEBO Emitter Cutoff Current VEB= 10V;.
