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Inchange Semiconductor
3DD13009K
DESCRIPTION - High breakdown voltage - High switching speed - High current capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Energy-saving ligh - Electronic ballasts - High frequency switching power supply - High frequency power transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current Base Current-Peak Collector Power Dissipation TC=25℃ Ti Junction...
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