High breakdown voltage
High switching speed
High current capability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Energy-saving ligh
Electronic ballasts
High frequency switching power supply
High frequency pow
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isc Silicon NPN Power Transistor
DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Energy-saving ligh ·Electronic ballasts ·High frequency switching power supply ·High frequency power transform
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
24
A
IB
Base Current
6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
3DD13009K Datasheet
